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Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
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Cautions
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2SK2084(L), 2SK2084(S)
Silicon N-Channel MOS FET
ADE-208-1342 (Z) 1st. Edition Mar. 2001 Application
High speed power switching
Features
* * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter
Outline
DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S
2
3
23
2SK2084(L), 2SK2084(S)
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 20 20 7 28 7 20 150 -55 to +150
Unit V V A A A W C C
2SK2084(L), 2SK2084(S)
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 20 20 -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.04 0.058 9 800 680 165 15 60 100 80 0.9 80 Max -- -- 10 100 2.5 0.053 0.075 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V ns I F = 7 A, VGS = 0 I F = 7 A, VGS = 0, diF / dt = 20 A / s Unit V V A A V Test conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 16 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 4 A VGS = 10 V*1 ID = 4 A VGS = 4 V*1 ID = 4 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 5
Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on)
2SK2084(L), 2SK2084(S)
Power vs. Temperature Derating 40 Pch (W) I D (A) 50 30 10 3 1
PW
Maximum Safe Operation Area
10 s
100 s
s ms DC (1 (T O sh c = pe ot) Operation in 25 rati this area is C on limited by R DS(on) )
10 =
30
1
m
Channel Dissipation
20
10
Drain Current
0.3 Ta = 25 C 0 50 100 150 Tc (C) 200 0.1 0.3 1 3 Drain to Source Voltage 10 30 V DS (V)
Case Temperature
Typical Output Characteristics 20 10 V 6V 4V Pulse Test (A) 20
Typical Transfer Characteristics
I D (A)
16
16
V DS = 10 V Pulse Test
3.5 V 12 ID Drain Current 3V 4 VGS = 2.5 V 12
Drain Current
8
8 Tc = 75 C 25 C -25 C 1 2 3 Gate to Source Voltage 4 5 V GS (V)
4
0
2 4 6 Drain to Source Voltage
8 10 V DS (V)
0
2SK2084(L), 2SK2084(S)
Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source On State Resistance R DS(on) ( ) Drain to Source Saturation Voltage V DS(on) (V) 0.5 Pulse Test 0.4 Static Drain to Source State Resistance vs. Drain Current Pulse Test 0.1 V GS = 4 V 10 V
0.2
0.3
I D= 5 A
0.05
0.2 2A 1A 0 2 4 6 Gate to Source Voltage 8 V GS (V) 10
0.1
0.02
0.01 0.1 0.2
0.5 1 2 5 10 Drain Current I D (A)
20
Static Drain to Source on State Resistance R DS(on) ( )
Pulse Test 0.16
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance vs. Temperature 0.20
Forward Transfer Admittance vs. Drain Current 20 10 5 Tc = -25 C 25 C 75 C V DS = 10 V Pulse Test
0.12 V GS = 4 V
5A 1A 2A 1A 2A 5A
0.08
2 1 0.5 0.1
0.04 10 V 0 -40
0 40 80 120 160 Case Temperature Tc (C)
0.2
0.5
1
2
5
10
Drain Current I D (A)
2SK2084(L), 2SK2084(S)
Body to Drain Diode Reverse Recovery Time 200 Reverse Recovery Time trr (ns) Typical Capacitance vs. Drain to Source Voltage
10000
100
Capacitance C (pF)
1000
Ciss Coss
50 di / dt = 20 A / s V GS = 0, Ta = 25 C
100
Crss VGS = 0 f = 1 MHz
20
10 0.1
10
0.2 0.5 1 2 5 10 Reverse Drain Current I DR (A)
0
4
8
12
16
20
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics V DS (V) V GS (V) 50 20
Switching Characteristics 200 t d(off) Switching Time t (ns) 100 tf V GS = 10 V V DD = 20 V PW = 5 s duty < 1 % tr t d(on)
40
Drain to Source Voltage
30 VDS
12
Gate to Source Voltage
V DD = 20 V 10 V 5V
VGS
16
50
20
8
20
10
V DD = 20 V 10 V 5V 8 16 24 32 Gate Charge Qg (nc)
4 0 40
0
10 0.1
0.2
0.5 1 Drain Current
2 5 I D (A)
10
2SK2084(L), 2SK2084(S)
Reverse Drain Current vs. Souece to Drain Voltage 20 Reverse Drain Current I DR (A) Pulse Test 16 10 V 5V 12 V GS = 0, -5 V
8
4
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5
0.2
0.1 0.05
0.02
1 0.0
0.3
0.1
ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C
Pu lse
PDM PW T
0.03
1s
t ho
D=
PW T
0.01 10
100
1m
10 m Pulse Width
100 m PW (S)
1
10
2SK2084(L), 2SK2084(S)
Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 20 V Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Waveform
90%
2SK2084(L), 2SK2084(S)
Package Dimensions As of January, 2001
6.5 0.5 5.4 0.5 1.7 0.5
Unit: mm
2.3 0.2 0.55 0.1
4.7 0.5
16.2 0.5
3.1 0.5
1.15 0.1 0.8 0.1 (0.7)
5.5 0.5
1.2 0.3
0.55 0.1 2.29 0.5 2.29 0.5
0.55 0.1
Hitachi Code JEDEC EIAJ Mass (reference value)
DPAK (L)-(2) -- -- 0.42 g
2SK2084(L), 2SK2084(S)
As of January, 2001
1.7 0.5
Unit: mm
6.5 0.5 5.4 0.5 2.3 0.2 0.55 0.1 (4.9)
5.5 0.5
1.2 Max
0 - 0.25
1.15 0.1 2.5 0.5 0.8 0.1 2.29 0.5 2.29 0.5
0.55 0.1
Hitachi Code JEDEC EIAJ Mass (reference value)
(5.3)
DPAK (S)-(1),(2) -- Conforms 0.28 g
2SK2084(L), 2SK2084(S)
As of January, 2001
1.5 0.5
Unit: mm
6.5 0.5 5.4 0.5 2.3 0.2 0.55 0.1 (5.1)
(0.1)
(0.1)
5.5 0.5
1.2 Max
0 - 0.25
1.15 0.1 2.5 0.5 0.8 0.1 2.29 0.5 2.29 0.5
0.55 0.1
Hitachi Code JEDEC EIAJ Mass (reference value)
(5.1)
DPAK (S)-(3) -- Conforms 0.28 g
2SK2084(L), 2SK2084(S)
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
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URL
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For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright (c) Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
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